题目：100G及以上的高速光电集成接收器

演讲人：William Ring, CEO and President - BB Photonics

摘要：

Integration of Photo nics on chip is necessary to address the future demands of the datacenter. The market demands for low cost, small footprint and low power require innovation in the design of the photo nic components. To reduce power and to enable on-chip integration requires designs that enable minimal temperature variation of MUX/De-MUX for the wavelength co ntrol and management. BB Photo nics is developing a platform approach integrating low loss dielectrics into InP wafers for wavelength routing and functio nality to enable mode matched devices that have a low thermal variation. This unique approach reduces size, cost, adds functio nality and enables high coupling to the passive waveguides from the III-V compo nents that can then be integrated with Spot-size co nverters and high-speed waveguide devices. The current work on 100GbE LR4 device integration will be discussed.

演讲题目：Heterogeneous integration: creating photo nic circuits for advanced systems-in-package

演讲人：Gregory Fish, CTO - Aurrion

摘要：

The use of photo nics in systems is evolving from an assembly of discrete lenses, filters, and exotic optical materials to modern system-in-package implementations wher the o nly identifying feature of the use of photo nics is the presence of a fiber jumper. This evolution started with the integration and co nsolidation of optical compo nents o nto a singular optical substrate and has been furthered through the development of packaging architectures that are indistinguishable from those used in standard electro nic OSAT flows. We will review recent progress in photo nic integration, packaging, and design methodologies developed at Aurrion that enable the incorporation of photo nics into systems by co nventional electro nic designers without prerequisite knowledge on designing optical l inks.

讲题：Excelling in the efficiency of lasers formed on silicon

演讲人：Shinji Matsuo - NTT Photo nics Lab

摘要：

Internet traffic is rising in datacom and computercom networks, and to prevent energy co nsumption from escalating, there is a need to reduce the operating energy of the laser. Thus, the integration of a membrane-buried heterostructure laser on a SiO2-on-silicon substrate is essential, because this increases device efficiency by enhancing carrier and photon confinement. We have employed epitaxial growth of a buried InP layer on a directly-bo nded active layer on a SiO2-on-silicon substrate. This approach can be pursued with silicon CMOS fabrication technologies, and it promises to trim fabrication costs.